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HSBA0139 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HSBA0139 product

HSBA0139

MOSFETs - Single

P-ChannelMOSFET100VTrench

The HSBA0139 is a high-performance P-Channel 100V MOSFET suitable for power switching applications requiring low on-resistance.

Best for

  • Power switching
  • DC-DC converters

Avoid if

  • Applications requiring N-Channel logic
  • Extremely space-constrained designs without thermal dissipation

Check before use

  • Gate drive voltage levels
  • Thermal design

Key specifications

VDS
-100 V
ID
-30 A
RDS(ON)
35 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

a41b061bb7b769a5a94eec6281f501ae_2010160905_HUASHUO-HSBA0139_C845606.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HSBA0139: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HSBA0139 is a P-Channel enhancement mode MOSFET using advanced trench technology, designed for fast switching and low RDS(ON) performance.