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HSBA6076 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HSBA6076 product

HSBA6076

MOSFETs - Single

N-Channel60VMOSFETSGT

The HSBA6076 is a high-performance 60V N-channel SGT MOSFET designed for high-current power management applications.

Best for

  • Synchronous rectification
  • High-efficiency DC/DC conversion

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal dissipation requirements at 150A

Key specifications

VDS
60 V
ID
150 A
RDS(on)
1.6 mΩ (typ)

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementMotor Control

Datasheet

31bd5a797fee4447b2a875269bf75c7e_2309251427_HUASHUO-HSBA6076_C7543698.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HSBA6076: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 60V N-channel MOSFET utilizing SGT (Shielded Gate Trench) technology, optimized for low RDS(ON) and fast switching.