ProjectsPricingInsights

HSBB0210 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HSBB0210 product

HSBB0210

MOSFETs - Arrays

Dual N-Channel100VMOSFETPRPAK3x3

The HSBB0210 is a dual N-channel 100V MOSFET in a compact PRPAK3x3 package, optimized for high-speed switching in portable and battery-powered electronics.

Best for

  • Portable electronics
  • Battery management systems
  • High-speed switching circuits

Avoid if

  • Applications requiring high continuous current beyond 2.8A
  • High-temperature environments without adequate cooling

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

VDS
100 V
ID (25°C)
2.8 A
RDS(on) (Max)
100 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Portable EquipmentBattery Powered Systems

Datasheet

4241afdb7bbb55aa8173a5b1c3393218_2208111730_HUASHUO-HSBB0210_C5128202.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HSBB0210: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HSBB0210 is a dual N-channel MOSFET from Huashuo, designed for high-speed switching applications with a 100V drain-source voltage rating.