HSBB6066 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HSBB6066 product

HSBB6066

MOSFETs - Single

N-Channel60V60ASGT MOSFETFast Switching

The HSBB6066 is a 60V, 60A N-Channel MOSFET using SGT technology, optimized for high-efficiency power switching in a compact PRPAK3x3 package.

Best for

  • Motor drives
  • DC/DC power supplies
  • Synchronous rectification

Avoid if

  • Applications requiring >60V breakdown voltage
  • Extremely high-temperature environments exceeding 150°C

Check before use

  • Thermal dissipation path on PCB
  • Gate drive voltage levels

Key specifications

VDS
60 V
ID
60 A
RDS(ON)
4.4 mΩ
Qg
33 nC

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor ControlDC/DC ConvertersSynchronous Rectification

CAD Models

Download ECAD models for HSBB6066: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HSBB6066 is an N-Channel MOSFET from Huashuo Semiconductor, designed for fast switching applications with a 60V breakdown voltage and 60A current capacity.