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HSCB2016 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HSCB2016 product

HSCB2016

MOSFETs - Single

N-ChannelMOSFET20VTrench

The HSCB2016 is a 20V N-Channel Trench MOSFET in a DFN2x2-6L package, optimized for high-efficiency small power switching and load switch applications.

Best for

  • Small power switching
  • Load switches

Avoid if

  • High-voltage applications exceeding 20V

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
20 V
ID
16 A
RDS(ON)
7 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SwitchingLoad Switch

Datasheet

e268ff516e7e8857351496e570836ec3_2105241828_HUASHUO-HSCB2016_C2828493.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HSCB2016: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HSCB2016 is a high cell density N-channel Trench MOSFET designed for small power switching and load switch applications.