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HSD60N10 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HSD60N10 product

HSD60N10

MOSFETs - Single

MOSFETN-Channel100VTO-252

The HSD60N10 is a 100V N-Channel MOSFET optimized for high-frequency power conversion applications.

Best for

  • High-frequency switching power supplies
  • Active Power Factor Correction (PFC)

Avoid if

  • Applications requiring extremely low gate charge or ultra-small form factors

Check before use

  • Thermal design and gate drive circuitry

Key specifications

Vdss
100 V
Id
60 A
Rds(on)
8.5 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Supply

Datasheet

c6320ca0be9bf49c3e5ed2451b6b8dc5_2312251801_HUAKE-HSD60N10_C19725802.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HSD60N10: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 100V N-Channel MOSFET housed in a TO-252 package, capable of handling up to 60A of continuous drain current.