ProjectsPricingInsights

HSH18N20 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HSH18N20 product

HSH18N20

MOSFETs - Single

N-ChannelMOSFET200VTrench

The HSH18N20 is a 200V N-Channel MOSFET optimized for high-efficiency power conversion.

Best for

  • Synchronous buck converters
  • General power switching

Avoid if

  • Applications requiring extremely low RDS(on) below 100mΩ

Check before use

  • Thermal design for high-current operation

Key specifications

VDS
200 V
ID
18 A
RDS(on)
170 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

04fc39e5257c95040f2e1fc7dd8312c8_2303071100_HUASHUO-HSH18N20_C5341708.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HSH18N20: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-performance trench N-channel MOSFET with a 200V drain-source breakdown voltage and 18A continuous drain current capability.