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HSM4P10D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HSM4P10D product

HSM4P10D

MOSFETs - Arrays

MOSFETP-Channel100VDual

The HSM4P10D is a dual P-channel 100V MOSFET designed for fast switching applications, featuring low on-resistance and high cell density trench technology.

Best for

  • Power management
  • Fast switching circuits

Avoid if

  • Applications requiring higher than 4A continuous current
  • High-temperature environments exceeding 150°C

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
-100 V
ID
-4 A
RDS(on)
105 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power

Datasheet

579bd7da2b2e65f6e3c1a2c5a5d0364b_2407111421_HUASHUO-HSM4P10D_C28314512.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HSM4P10D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HSM4P10D is a dual P-channel 100V fast-switching MOSFET manufactured by Huashuo, utilizing advanced trench technology to achieve low RDS(on) and gate charge.