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HSSK2N7002 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HSSK2N7002 product

HSSK2N7002

MOSFETs - Arrays

MOSFETDual ChannelN-Channel60V

The HSSK2N7002 is a dual N-channel 60V MOSFET in a SOT-363 package, optimized for low-power switching and level shifting in portable devices.

Best for

  • Low-side load switching
  • Level shifting
  • DC-DC conversion in portable electronics

Avoid if

  • High-current power switching applications

Check before use

  • Thermal dissipation limits in high-density layouts

Key specifications

VDS
60 V
ID
300 mA
RDS(on)
2.3 Ω

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Portable ElectronicsDC-DC Converters

Datasheet

a86ac6af30eb3f210c2043d853aeb9b0_2309251426_HUASHUO-HSSK2N7002_C7543684.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HSSK2N7002: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HSSK2N7002 is a dual N-channel MOSFET from Huashuo Semiconductor, featuring a 60V drain-source voltage and 300mA continuous current rating, housed in a SOT-363 package.