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HSW2N10D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HSW2N10D product

HSW2N10D

MOSFETs - Arrays

Dual MOSFETN-Channel100V

The HSW2N10D is a dual N-channel MOSFET in a SOT23-6L package, rated for 100V and 2A, optimized for efficient power switching.

Best for

  • PWM applications
  • Load switching

Avoid if

  • High-power applications exceeding 0.7W dissipation

Check before use

  • Gate drive voltage levels

Key specifications

VDS
100 V
ID
2 A
RDS(ON)
260 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power

Datasheet

0978c77d1a6d4326dab186737468010f_2407111423_HUASHUO-HSW2N10D_C28314507.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HSW2N10D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel trench MOSFET designed for small power switching and load switch applications.