ProjectsPricingInsights

HSW6800 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HSW6800 product

HSW6800

MOSFETs - Arrays

Dual N-ChannelMOSFET30VSOT23-6L

The HSW6800 is a dual N-channel MOSFET in a SOT23-6L package, designed for efficient small power switching and load management.

Best for

  • Small power switching
  • Load switches

Avoid if

  • High-power applications exceeding 1.4W dissipation

Check before use

  • Thermal design on PCB

Key specifications

VDS
30 V
ID
4 A
RDS(ON)
45 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

6c06765a601b4d0a0128698aac3a6ae1_2105241829_HUASHUO-HSW6800_C2828481.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HSW6800: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HSW6800 is a dual N-channel MOSFET featuring high cell density trench technology, optimized for low RDS(ON) and fast switching.