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HSW8810 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HSW8810 product

HSW8810

MOSFETs - Arrays

MOSFETDual N-ChannelBattery Protection

The HSW8810 is a dual N-channel MOSFET designed for battery protection and power switching, featuring low RDS(ON) and integrated ESD protection in a compact SOT23-6L package.

Best for

  • Lithium-ion battery protection
  • Compact power switching

Avoid if

  • High-voltage applications exceeding 20V
  • High-power designs requiring >1.25W dissipation

Check before use

  • Gate drive voltage compatibility
  • Thermal dissipation requirements

Key specifications

VDS
20 V
ID
6 A
RDS(ON)
20 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery ManagementConsumer Electronics

Datasheet

60c70952d58c48e51b7af68c6d0e774d_2010160905_HUASHUO-HSW8810_C845594.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HSW8810: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HSW8810 is a dual N-channel MOSFET from Huashuo, specifically designed for high-density applications like Lithium-ion battery packs, offering robust ESD protection.