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HUF76609D3S-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HUF76609D3S-HXY product

HUF76609D3S-HXY

MOSFETs - Single

MOSFETN-Channel100VDPAK

The HUF76609D3S-HXY is a 100V N-Channel MOSFET designed for efficient power switching and DC/DC conversion.

Best for

  • DC/DC converters
  • Power switching circuits

Avoid if

  • Applications requiring extremely low RDS(ON) below 50mΩ

Check before use

  • Thermal design and gate drive voltage

Key specifications

VDS
100 V
ID
15 A
RDS(ON)
112 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

d4acd338dd3c5cb078ab89d1d9125198_2404231719_HXY-MOSFET-HUF76609D3S-HXY_C22367154.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HUF76609D3S-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, optimized for low RDS(ON) and gate charge.