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HUMH9NTN AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HUMH9NTN product

HUMH9NTN

Transistors - Bipolar (BJT) - Pre-Biased

Dual TransistorDigital TransistorSOT-363

The HUMH9NTN is a dual NPN pre-biased digital transistor in a compact SOT-363 package, suitable for space-constrained switching applications.

Best for

  • Space-saving switching circuits
  • Signal conditioning

Avoid if

  • High-power applications exceeding 150mW

Check before use

  • Thermal management in high-density layouts

Key specifications

Vcc
50 V
Ic (Peak)
100 mA
R1
10 kΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General Purpose

Datasheet

35ce9313bea54fce37f50551e51cc111_2406111705_HXY-MOSFET-HUMH9NTN_C22461935.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HUMH9NTN: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual digital transistor package containing two independent DTC114Y chips, designed to save PCB space and assembly costs.