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HXY100N03DF AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HXY100N03DF product

HXY100N03DF

MOSFETs - Single

N-ChannelMOSFET30V60A

The HXY100N03DF is a 30V, 60A N-Channel MOSFET in a DFN3X3-8L package, optimized for battery protection and power switching.

Best for

  • Battery protection circuits
  • Load switches
  • UPS systems

Avoid if

  • Applications requiring >30V drain-source voltage
  • High-temperature environments exceeding 150°C

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
30 V
ID
60 A
RDS(on)
5.5 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

1ed1dd06b60f681d99519e59ae729891_2212160808_HXY-MOSFET-HXY100N03DF_C3033464.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HXY100N03DF: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, designed for efficient power switching and battery protection.