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HXY20N10D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HXY20N10D product

HXY20N10D

MOSFETs - Single

MOSFETN-Channel100VPower

The HXY20N10D is a 100V, 20A N-Channel MOSFET designed for efficient power switching in battery protection and load management applications.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V
  • High-frequency switching where gate charge (Qg=26.2nC) might be excessive

Check before use

  • Thermal design and heat sinking
  • Gate drive voltage levels

Key specifications

VDS
100 V
ID
20 A
RDS(on)
87 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

dbce2ff48fe79a6ef2ccc08336c017a6_2212160808_HXY-MOSFET-HXY20N10D_C3033434.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HXY20N10D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HXY20N10D is an N-Channel enhancement mode MOSFET using advanced trench technology, rated for 100V and 20A.