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HXY2310AI AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HXY2310AI product

HXY2310AI

MOSFETs - Single

N-ChannelMOSFETSOT-2360V

The HXY2310AI is a 60V, 3A N-Channel MOSFET in an SOT-23 package, optimized for low-voltage gate drive applications like battery protection and load switching.

Best for

  • Battery management systems
  • Small load switching
  • Low-voltage power control

Avoid if

  • High-current applications exceeding 3A continuous drain current
  • High-temperature environments without proper heat sinking

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
60 V
ID
3 A
RDS(ON)
85 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery ProtectionLoad Switching

Datasheet

2836dad52f6d48f39043566683c46672_2212160808_HXY-MOSFET-HXY2310AI_C3033388.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HXY2310AI: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HXY2310AI is an N-Channel enhancement mode MOSFET manufactured by HXY MOSFET, designed for efficient switching in compact applications.