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HXY3012GD AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HXY3012GD product

HXY3012GD

MOSFETs - Arrays

MOSFETDual ChannelN-ChannelP-Channel

The HXY3012GD is a dual N+P-channel enhancement mode MOSFET in a TO-252-4L package, designed for switching applications like battery protection and motor control.

Best for

  • Battery protection
  • Wireless charging
  • Brushless motor drivers

Avoid if

  • Applications requiring extremely high power density beyond the thermal limits of the TO-252-4L package.

Check before use

  • Gate drive voltage levels
  • Thermal design

Key specifications

VDS
30V / -30V
ID
20A / -20A
RDS(on)
<24mΩ / <40mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor ControlPower Management

Datasheet

1f6241d5e16eee15ab79bd3ac49ce09d_2212160808_HXY-MOSFET-HXY3012GD_C3033441.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HXY3012GD: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N+P-channel enhancement mode MOSFET using advanced trench technology, suitable for battery protection and switching applications.