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HXY30G20DF AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HXY30G20DF product

HXY30G20DF

MOSFETs - Arrays

MOSFETDual ChannelTrench

The HXY30G20DF is a dual N+P-channel MOSFET in a DFN3X3B-8L package, optimized for battery protection and load switching.

Best for

  • Battery protection circuits
  • Load switches

Avoid if

  • Applications exceeding 30V or requiring high continuous current without adequate cooling.

Check before use

  • Thermal resistance and PCB layout for heat dissipation.

Key specifications

VDS
30V / -30V
ID
16A / -14A
RDS(on)
<20mΩ / <30mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery ManagementLoad Switching

Datasheet

5636e02e1b6c1e344ad397a4b7da7b7c_2206231830_HXY-MOSFET-HXY30G20DF_C3033456.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HXY30G20DF: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N+P-channel enhancement mode MOSFET using trench technology, suitable for battery protection and switching.