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HXY30N03DF AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HXY30N03DF product

HXY30N03DF

MOSFETs - Single

N-ChannelMOSFET30VDFN3X3-8L

The HXY30N03DF is a 30V, 30A N-Channel MOSFET in a DFN3X3-8L package, optimized for low-voltage switching and battery protection.

Best for

  • Battery management
  • Load switching

Avoid if

  • High-voltage applications exceeding 30V

Check before use

  • Thermal design
  • Gate drive voltage

Key specifications

VDS
30 V
ID
30 A
RDS(ON)
13 mΩ
Package
DFN3X3-8L

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

ca1519d8b862a9f7abc96e12b3e50d3b_2206222045_HXY-MOSFET-HXY30N03DF_C3033461.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HXY30N03DF: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for high-efficiency power switching, featuring low on-resistance and low gate charge.