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HXY30N06DF AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HXY30N06DF product

HXY30N06DF

MOSFETs - Single

MOSFETN-Channel60VDFN3X3-8L

The HXY30N06DF is a 60V N-Channel MOSFET in a DFN3X3-8L package, optimized for low-voltage gate drive applications like battery protection and load switching.

Best for

  • Battery protection circuits
  • Load switches
  • UPS systems

Avoid if

  • Applications requiring extremely high-reliability life-support systems

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
60 V
ID
15 A
RDS(on)
40 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

0b2ace2b06069529bb27f8e96454b0bf_2312281724_HXY-MOSFET-HXY30N06DF_C3033462.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HXY30N06DF: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for switching applications, featuring a 60V drain-source breakdown voltage and 15A continuous current rating.