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HXY3401MI AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HXY3401MI product

HXY3401MI

MOSFETs

P-ChannelMOSFETSOT-23-3L

The HXY3401MI is a -30V, -4.2A P-Channel MOSFET in a SOT-23-3L package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-power applications exceeding 1.2W dissipation

Check before use

  • Gate drive voltage levels

Key specifications

VDS
-30 V
ID
-4.2 A
RDS(ON)
< 54 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

11a59fb1dcc21025a98f1ca9cf04709e_2212160808_HXY-MOSFET-HXY3401MI_C3033396.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HXY3401MI: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, designed for low-voltage switching applications.