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HXY3422MI AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HXY3422MI product

HXY3422MI

MOSFETs - Single

MOSFETN-Channel60VSOT-23-3L

The HXY3422MI is a 60V N-Channel MOSFET designed for efficient switching and power management in compact SOT-23-3L packages.

Best for

  • Battery protection circuits
  • Compact power switching

Avoid if

  • Applications requiring extremely high reliability or life-support systems

Check before use

  • Thermal design and PCB layout

Key specifications

VDS
60 V
ID
4.5 A
RDS(ON)
< 85 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

5b5f6fdad3e5680644176bb741eb547c_2212160808_HXY-MOSFET-HXY3422MI_C3033401.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HXY3422MI: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using advanced trench technology, optimized for low RDS(ON) and low gate charge.