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HXY3N10AI AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HXY3N10AI product

HXY3N10AI

MOSFETs - Single

MOSFETN-Channel100VSOT-23

The HXY3N10AI is a 100V, 3A N-Channel MOSFET in an SOT-23 package, optimized for battery protection and load switching.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-power applications exceeding 1W dissipation

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

VDS
100 V
ID
3 A
RDS(on)
248 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

0adc46bd1848849717e4264e5991c9dd_2212160808_HXY-MOSFET-HXY3N10AI_C3033403.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HXY3N10AI: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for switching applications, featuring a 100V drain-source voltage and 3A current rating.