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HXY40P03D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HXY40P03D product

HXY40P03D

MOSFETs - Single

P-ChannelMOSFETTrench Technology

The HXY40P03D is a -30V, -40A P-Channel MOSFET in a TO-252-2L package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection
  • Load switching

Avoid if

  • Applications requiring high-side switching with complex gate drive requirements

Check before use

  • Thermal dissipation on the PCB

Key specifications

VDS
-30 V
ID
-40 A
RDS(on)
< 23 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

b1e091e769a90d1dbf2a0e26f11429e7_2212160808_HXY-MOSFET-HXY40P03D_C3033433.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HXY40P03D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, designed for efficient power switching.