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HXY4614S AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HXY4614S product

HXY4614S

MOSFETs - Arrays

Dual MOSFETN+P ChannelSOP-8

The HXY4614S is a dual N+P-channel enhancement mode MOSFET in an SOP-8 package, designed for battery protection and switching applications.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-power applications exceeding 1.67W dissipation

Check before use

  • Gate drive voltage levels
  • Thermal design

Key specifications

VDS
40V / -40V
ID
7.2A / -6.5A
RDS(ON)
<26mΩ / <44mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery ManagementLoad Switching

Datasheet

bdd36285f1ad7c9767030fdcc263fd11_2206222045_HXY-MOSFET-HXY4614S_C3033413.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HXY4614S: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N+P-channel enhancement mode MOSFET using advanced trench technology, optimized for low RDS(ON) and low gate charge.