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HXY5N10AI AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HXY5N10AI product

HXY5N10AI

MOSFETs - Single

MOSFETN-Channel100VSOT-23

The HXY5N10AI is a 100V N-Channel MOSFET in an SOT-23 package, optimized for low-voltage gate drive applications like battery protection and load switching.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-power applications exceeding 3.1W dissipation

Check before use

  • Thermal dissipation limits in SOT-23

Key specifications

VDS
100 V
ID
5 A
RDS(on)
125 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

041b42cab2847f17f7bcd38462e3da1f_2212160808_HXY-MOSFET-HXY5N10AI_C3033404.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HXY5N10AI: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for switching applications, featuring a 100V drain-source breakdown voltage.