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HXY5N10MI AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HXY5N10MI product

HXY5N10MI

MOSFETs - Single

MOSFETN-Channel100VSOT-23-3L

The HXY5N10MI is a 100V, 5A N-Channel MOSFET in a SOT-23-3L package, designed for battery protection and switching applications.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-power applications exceeding 1.5W dissipation

Check before use

  • Thermal design
  • Gate drive voltage

Key specifications

VDS
100 V
ID
5 A
RDS(ON)
120 mΩ (max)

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementGeneral Switching

Datasheet

6fc57961a98e09f6a427d6c1b38e650c_2206222045_HXY-MOSFET-HXY5N10MI_C3033405.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HXY5N10MI: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology for efficient switching.