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HXY60N02D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HXY60N02D product

HXY60N02D

MOSFETs

N-ChannelMOSFET20V60A

The HXY60N02D is a 20V, 60A N-Channel MOSFET in a TO-252-2L package, optimized for low-voltage switching applications like battery protection.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • Applications requiring VDS > 20V
  • High-frequency switching where gate charge is critical

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
20 V
ID
60 A
RDS(on)
6 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery ManagementLoad Switching

Datasheet

72eb29fe3152c91a3a1477fd08f27df9_2312281724_HXY-MOSFET-HXY60N02D_C3033437.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HXY60N02D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for low-voltage power switching, featuring advanced trench technology.