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HXY6800LI AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HXY6800LI product

HXY6800LI

MOSFETs - Arrays

MOSFETDual N-Channel30VSOT-23-6L

The HXY6800LI is a dual N-channel MOSFET in a SOT-23-6L package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • High-power applications exceeding 1.25W dissipation
  • High-voltage circuits above 30V

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

VDS
30 V
ID
4.5 A
RDS(on)
38 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

5590af0e430d0795061f7d23ccfee6ed_2212161630_HXY-MOSFET-HXY6800LI_C5148646.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HXY6800LI: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET using trench technology, suitable for battery protection and load switching.