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HXY70P03D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HXY70P03D product

HXY70P03D

MOSFETs - Single

P-ChannelMOSFETTrench Technology

The HXY70P03D is a high-current P-Channel MOSFET designed for power switching and battery protection applications.

Best for

  • Battery protection
  • Load switching

Avoid if

  • Applications requiring N-Channel logic
  • Extremely space-constrained designs where TO-252 is too large

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
-30 V
ID
-70 A
RDS(on)
10 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

3e18c02a1153e164f0c33c9fe6ce6fcc_2212160808_HXY-MOSFET-HXY70P03D_C3033440.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HXY70P03D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, optimized for low on-resistance and efficient switching.