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HXY8205ES AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HXY8205ES product

HXY8205ES

MOSFETs - Arrays

MOSFETDual N-Channel20VTSSOP-8

The HXY8205ES is a dual N-channel enhancement mode MOSFET in a TSSOP-8 package, optimized for 20V, 6A power switching and load management.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • Applications requiring voltages above 20V
  • High-current applications exceeding 6A continuous

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

VDS
20 V
ID
6 A
RDS(ON)
< 27 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementGeneral Switching

Datasheet

073e0f27f2c14f5a3883eb173be53efe_2209201730_HXY-MOSFET-HXY8205ES_C5148648.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HXY8205ES: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HXY8205ES is a dual N-channel enhancement mode MOSFET designed for high-density, small-power switching applications.