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HY1906B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HY1906B product

HY1906B

MOSFETs - Single

N-ChannelMOSFET60V120A

The HY1906B is a 60V, 120A N-Channel MOSFET in a TO-263-2L package, optimized for high-current power management and inverter applications.

Best for

  • Inverter systems
  • Power management

Avoid if

  • Applications requiring low-voltage logic level switching without a gate driver

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Vdss
60 V
Id
120 A
RDS(on)
6.0 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Inverter SystemsPower Management

Datasheet

2594290746ffb52e2c44948eaca30884_2304140030_HUAYI-HY1906B_C330379.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HY1906B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HY1906B is an N-Channel enhancement mode MOSFET from HUAYI, rated for 60V and 120A, designed for rugged power management.