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HY1908D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HY1908D product

HY1908D

MOSFETs - Single

N-ChannelMOSFET80VPower Management

The HY1908D is an 80V, 90A N-Channel MOSFET optimized for power management and inverter applications, offering low on-resistance and robust thermal performance.

Best for

  • Inverter systems
  • Power management circuits

Avoid if

  • Applications requiring extremely low gate charge or ultra-high frequency switching

Check before use

  • Thermal design
  • Package footprint

Key specifications

VDSS
80 V
ID
90 A
RDS(ON)
7.8 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementInverter Systems

Datasheet

3bb8e550b7d0b5b81270ea7ff0258f30_1809071509_HUAYI-HY1908D_C108891.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HY1908D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HY1908D is an N-Channel Enhancement Mode MOSFET from HUAYI, designed for high-efficiency power switching and inverter systems.