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HY1920P AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HY1920P product

HY1920P

MOSFETs - Single

N-ChannelMOSFET200VPower

The HY1920P is a high-performance 200V, 90A N-Channel MOSFET suitable for power management and inverter applications.

Best for

  • Inverter systems
  • Power management

Avoid if

  • Low-voltage applications where lower RDS(on) devices are more efficient

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Vdss
200 V
Id
90 A
RDS(on)
22 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementInverter Systems

Datasheet

40f65429e3b23d69605bae836cc118bd_HUAYI(华羿微)&HY1920P.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HY1920P: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HY1920P is an N-Channel Enhancement Mode MOSFET from Huayi Microelectronics, rated for 200V and 90A.