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HY1920W AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HY1920W product

HY1920W

MOSFETs - Single

MOSFETN-Channel200VPower

The HY1920W is a robust 200V, 90A N-Channel MOSFET in a TO-247-3L package, suitable for high-power inverter and power management applications.

Best for

  • Inverter systems
  • Power management

Avoid if

  • Low-power or space-constrained designs

Check before use

  • Thermal dissipation requirements

Key specifications

Vdss
200 V
Id
90 A
RDS(on)
23 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Inverter SystemsPower Management

Datasheet

0bbbe8d5d831bb339cdc3e329a2758ba_1912111437_HUAYI-HY1920W_C358133.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HY1920W: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HY1920W is an N-Channel enhancement mode MOSFET designed for high-voltage, high-current power applications.