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HY3215B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HY3215B product

HY3215B

MOSFETs - Single

MOSFETN-Channel150V120A

The HY3215B is a high-power N-Channel MOSFET rated for 150V and 120A, optimized for efficient switching and inverter applications.

Best for

  • Inverter systems
  • High-power switching

Avoid if

  • Low-voltage logic level applications

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage

Key specifications

VDSS
150 V
ID
120 A
RDS(on)
12 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementInverter Systems

Datasheet

d4e99163be72353348d67d91024c05c4_2404031726_HUAYI-HY3215B_C248834.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HY3215B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HY3215B is an N-Channel Enhancement Mode MOSFET from HUAYI, designed for high-voltage and high-current power switching.