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HY3312B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HY3312B product

HY3312B

MOSFETs - Single

MOSFETN-Channel125V130A

The HY3312B is a high-performance N-Channel MOSFET suitable for power management and switching applications.

Best for

  • Inverter systems
  • Switching power supplies

Avoid if

  • Low-power, space-constrained applications

Check before use

  • Thermal dissipation requirements

Key specifications

Vdss
125 V
Id
130 A
Rds(on)
7.7 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementSwitching

Datasheet

ce11afcb17f199df367596010e1604f3_1912111437_HUAYI-HY3312B_C357988.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HY3312B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HY3312B is an N-Channel Enhancement Mode MOSFET with a 125V drain-source voltage and 130A current rating.