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HY3708P AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HY3708P product

HY3708P

MOSFETs - Single

N-ChannelMOSFET80V170A

The HY3708P is an 80V, 170A N-Channel MOSFET in a TO-220FB-3L package, optimized for high-current inverter power management.

Best for

  • Inverter systems
  • High-current power switching

Avoid if

  • Applications requiring surface-mount (SMD) packages

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Vdss
80 V
Id
170 A
RDS(on)
3.8 mΩ (typ)

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Inverter Systems

Datasheet

76a4ab51ee8d2708e535b24887bb71a0_2105241934_HUAYI-HY3708P_C2835639.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HY3708P: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HY3708P is an N-Channel Enhancement Mode MOSFET from HUAYI, designed for high-efficiency power switching in inverter systems.