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HY3712B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HY3712B product

HY3712B

MOSFETs - Single

MOSFETN-ChannelPower

The HY3712B is a high-performance N-Channel MOSFET optimized for power switching and inverter applications.

Best for

  • Inverter systems
  • High-current switching

Avoid if

  • Low-power, space-constrained applications

Check before use

  • Thermal dissipation requirements

Key specifications

Vdss
125 V
Id
170 A
Rds(on)
6.3 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial Inverters

Datasheet

aad5afe3b30c8e2ec408556605e6ac2e_2101290006_HUAYI-HY3712B_C2688728.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HY3712B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HY3712B is an N-Channel Enhancement Mode MOSFET from HUAYI, designed for high-current switching and power management.