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HY3810P AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HY3810P product

HY3810P

MOSFETs - Single

MOSFETN-Channel100V180A

The HY3810P is a robust 100V, 180A N-Channel MOSFET suitable for high-power switching and inverter applications.

Best for

  • Inverter systems
  • High-current switching

Avoid if

  • Low-power, space-constrained applications

Check before use

  • Thermal dissipation requirements

Key specifications

Vdss
100 V
Id
180 A
Rds(on)
5.0 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementInverter Systems

Datasheet

87f8ee0bfa9fb27fc68323313f73c2b4_2304140030_HUAYI-HY3810P_C357981.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HY3810P: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HY3810P is an N-Channel Enhancement Mode MOSFET from HUAYI, rated for 100V and 180A.