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HY5110NA2W AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HY5110NA2W product

HY5110NA2W

MOSFETs - Single

MOSFETN-Channel100V295A

The HY5110NA2W is a high-current N-Channel MOSFET in a TO-247A-3L package, optimized for power switching and battery management systems.

Best for

  • High-power switching
  • BMS

Avoid if

  • Space-constrained designs requiring smaller packages

Check before use

  • Thermal dissipation requirements

Key specifications

Vdss
100 V
Id
295 A
RDS(on)
2.4 mΩ (typ)

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SwitchingBMS

Datasheet

173051e32bc5758b996121524d5dc53c_2106081402_HUAYI-HY5110NA2W_C2837479.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HY5110NA2W: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 100V, 295A N-Channel Enhancement Mode MOSFET.