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HY5208W AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HY5208W product

HY5208W

MOSFETs - Single

MOSFETN-Channel80VPower

The HY5208W is a high-current 80V N-Channel MOSFET optimized for power inverter applications.

Best for

  • Power Inverters
  • High-current switching

Avoid if

  • Low-power or space-constrained designs

Check before use

  • Thermal dissipation requirements
  • Gate driver peak current

Key specifications

VDSS
80 V
ID
320 A
RDS(on)
1.7 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Inverters

Datasheet

35c723ba7603a1062ff45634c59fd4aa_1811151155_HUAYI-HY5208W_C330384.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HY5208W: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HY5208W is an N-Channel Enhancement Mode MOSFET designed for high-power applications, featuring an 80V drain-source voltage and 320A continuous current rating.