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HY5608W AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HY5608W product

HY5608W

MOSFETs - Single

MOSFETN-Channel80V360A

The HY5608W is a high-current 80V N-Channel MOSFET suitable for demanding power management and inverter switching tasks.

Best for

  • Inverter systems
  • High-current switching

Avoid if

  • Low-power or space-constrained designs

Check before use

  • Thermal dissipation requirements
  • Gate driver current capacity

Key specifications

Vdss
80 V
Id
360 A
RDS(on)
1.5 mΩ (typ)

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementInverters

Datasheet

91a23b7c7175f35bc2b8f0121495e16c_2103161036_HUAYI-HY5608W_C2760540.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HY5608W: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The HY5608W is an N-Channel enhancement mode MOSFET from HUAYI, rated for 80V and 360A, optimized for high-power switching.