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HYG006N04LS1TA AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG006N04LS1TA product

HYG006N04LS1TA

MOSFETs - Single

MOSFETN-Channel40V600ATOLL

The HYG006N04LS1TA is a high-performance 40V, 600A N-Channel MOSFET in a TOLL package, optimized for high-current switching and power management.

Best for

  • High-current switching
  • Inverter power management
  • Battery management systems

Avoid if

  • Low-power or space-constrained applications where TOLL is too large

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Drain-Source Voltage
40 V
Continuous Drain Current
600 A
RDS(ON) (10V)
0.45 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial Inverters

Datasheet

ee508a8660fb15bef04c63f4982465cb_2203221030_HUAYI-HYG006N04LS1TA_C2982928.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG006N04LS1TA: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET designed for high-current power applications, featuring a 40V drain-source voltage and 600A continuous current capability.