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HYG009N04LS1C2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG009N04LS1C2 product

HYG009N04LS1C2

MOSFETs - Single

N-ChannelMOSFET40V200A

The HYG009N04LS1C2 is a high-performance 40V, 200A N-Channel MOSFET designed for high-current switching and power management applications.

Best for

  • DC/DC converters
  • Battery protection circuits
  • High-current switching

Avoid if

  • Applications requiring very low gate charge or high-frequency switching beyond its optimized range

Check before use

  • Thermal dissipation capabilities of the PCB layout

Key specifications

VDSS
40 V
ID
200 A
RDS(ON)
0.75 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

8a185e2be06205dc74803ebe6cef612c_2109192230_HUAYI-HYG009N04LS1C2_C2890387.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG009N04LS1C2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a single N-Channel enhancement mode MOSFET optimized for low on-resistance and high current capacity.