ProjectsPricingInsights

HYG015N03LS1C2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG015N03LS1C2 product

HYG015N03LS1C2

MOSFETs - Single

N-ChannelMOSFET30V130A

The HYG015N03LS1C2 is a 30V, 130A N-Channel MOSFET in a PDFN5*6-8L package, optimized for high-efficiency power management and battery protection.

Best for

  • Battery protection circuits
  • DC/DC power management
  • High-current switching

Avoid if

  • Applications requiring higher than 30V breakdown voltage

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
30 V
ID
130 A
RDS(on)
1.4 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

05dc23a9fbae58919d3611f1923c7079_2310131105_HUAYI-HYG015N03LS1C2_C18222234.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG015N03LS1C2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a single N-Channel enhancement mode MOSFET from HUAYI, featuring low on-resistance and high current handling capabilities.