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HYG016N04LS1W AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG016N04LS1W product

HYG016N04LS1W

MOSFETs - Single

MOSFETN-ChannelPower

The HYG016N04LS1W is a high-current N-channel MOSFET designed for power switching, inverters, and power tools.

Best for

  • Power tools
  • Inverters
  • High-current switching

Avoid if

  • Low-power or space-constrained applications

Check before use

  • Thermal dissipation requirements

Key specifications

Drain-Source Voltage
40 V
Continuous Drain Current
290 A
RDS(ON)
1.2 mΩ (typ)

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

397b259bbcf11af559ef58540ae06ffb_2302011430_HUAYI-HYG016N04LS1W_C2897363.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG016N04LS1W: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 40V, 290A N-channel enhancement mode MOSFET in a TO-247A-3L package.