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HYG017N04LS1C2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG017N04LS1C2 product

HYG017N04LS1C2

MOSFETs - Single

N-ChannelMOSFET40V135A

The HYG017N04LS1C2 is a high-performance 40V, 135A N-channel MOSFET in a compact PDFN5*6-8L package, suitable for high-current switching and power management.

Best for

  • DC/DC converters
  • Battery protection circuits
  • High-current switching

Avoid if

  • Applications requiring extremely low gate charge or different package footprints.

Check before use

  • Thermal dissipation requirements for 135A operation.

Key specifications

VDS
40 V
ID
135 A
RDS(on)
1.7 mΩ (typ)

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

82644c88ded33623f683eebd1bcdf50d_2202131930_HUAYI-HYG017N04LS1C2_C2837481.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG017N04LS1C2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a single N-channel enhancement mode MOSFET with a 40V drain-source voltage and 135A continuous drain current capability.