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HYG019N06LS1C2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

HYG019N06LS1C2 product

HYG019N06LS1C2

MOSFETs - Single

N-ChannelMOSFET60VHigh Current

The HYG019N06LS1C2 is a high-performance 60V N-Channel MOSFET designed for high-current power applications.

Best for

  • Synchronous Buck Converters
  • Power Tools
  • Networking DC-DC Systems

Avoid if

  • Low-power or space-constrained designs where smaller packages are required.

Check before use

  • Thermal dissipation capabilities of the PCB layout.

Key specifications

Vdss
60 V
Id
210 A
Rds(on)
1.6 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial Tools

Datasheet

7733b3076883490682b0e8593bcea8c7_2307041416_HUAYI-HYG019N06LS1C2_C7436878.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for HYG019N06LS1C2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a single N-Channel enhancement mode MOSFET optimized for high-frequency power conversion.